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| FDS7064SN3 February 2004 FDS7064SN3 30V N-Channel PowerTrench SyncFETTM General Description The FDS7064SN3 is designed to improve the efficiency of Buck Regulators. Used as the Synchronous rectifier, (Low side MOSFET), losses can be reduced, not only in this device, but also in the Control switch, (High side MOSFET). After the low side MOSFET turns off, reverse recovery current in the body diode is dissipated in the High Side device. A Discrete Schottky diode in parallel with the Low Side MOSFET can lower the reverse recovery current, but parasitic PCB and Package Inductance reduce the effectiveness of the TM technology reduces this Schottky. SyncFET inductance to a minimum by providing a monolithic solution (MOSFET and Schottky in the same die), resulting in optimum performance. * Features RDS(ON) = 8.0 m @ VGS = 10 V RDS(ON) = 9.5 m @ VGS = 4.5 V * 16 A, 30 V * High performance trench technology for extremely low RDS(ON) * No inductance between MOSFET and Schottky * 40% reduction in Body Diode Forward Voltage * Optimized to reduce losses in Synchronous Buck Regulators * FLMP SO-8 package for enhanced thermal performance. Applications * Synchronous Rectifier D FLMP SO-8 NC D NC D NC D NC D 5 6 Bottom-side Drain Contact 4 3 2 1 Pin 1SO- G SG SS SS S 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25oC unless otherwise noted Parameter Ratings 30 16 (Note 1a) Units V V A W C 16 60 3.13 1.5 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 40 0.5 C/W C/W Package Marking and Ordering Information Device Marking FDS7064SN3 2004 Fairchild Semiconductor Corporation Device FDS7064SN3 Reel Size 13'' Tape width 12mm Quantity 2500 units FDS7064SN3 Rev C1 (W) FDS7064SN3 Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(on) TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) Test Conditions VGS = 0 V, ID = 1 mA ID = 10 mA, Referenced to 25C VDS = 24 V, VGS = 0 V VGS = 16 V, VDS = 0 V VDS = VGS, ID = 1 mA ID = 10 mA, Referenced to 25C VGS = 10 V, VGS = 4.5 V, VGS = 10 V, VDS = 10 V, ID = 16 A ID = 14 A ID = 16 A, TJ = 125C ID = 16 A Min 30 Typ Max Units V Off Characteristics 26 500 100 1 1.4 -2 6.5 7.5 9.1 70 8.0 9.5 11.5 3 mV/C A nA On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Forward Transconductance V mV/C m gFS Ciss Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd IS VSD tRR QRR S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) VDS = 15 V, V GS = 0 V, f = 1.0 MHz VGS = 15 mV, f = 1.0 MHz VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 2800 530 190 1.4 pF pF pF 20 22 80 33 35 ns ns ns ns nC nC nC Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge 11 20 50 18 VDS = 15 V, ID = 16 A, VGS = 5.0 V 25 6 6 Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Schottky Diode Forward Current Drain-Source Schottky Diode (Note 2) VGS = 0 V, IS = 4.3 A Forward Voltage IF = 16 A Reverse Recovery Time diF/dt = 300 A/us Reverse Recovery Charge 4.3 0.4 22 20 0.7 A V ns nC Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 40C/W when mounted on a 1in2 pad of 2 oz copper b) 85C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDS7064SN3 Rev C1 (W) FDS7064SN3 Typical Characteristics 60.00 50.00 ID, DRAIN CURRENT (A) 40.00 30.00 20.00 10.00 2.0V 0.00 0.00 0.25 0.50 0.75 1.00 1.25 1.50 2.25 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS=10.0 V 3.5V 6.0V 4.5V 2.5V 3.0V VGS = 2.5V 2 1.75 1.5 1.25 1 0.75 0 10 20 30 40 50 60 3.0V 3.5V 4.0V 4.5V 6.0V 10.0V VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 40 RDS(ON), ON-RESISTANCE (MILLIOHM) 1.60 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 16A VGS = 10V 1.40 ID =8A 30 1.20 20 1.00 TA = 125oC 10 0.80 TA = 25oC 0.60 -50 -25 0 25 50 75 100 o 125 150 0 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation withTemperature. 60 50 ID, DRAIN CURRENT (A) IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VDS = 5V VGS = 0V 10 TA = 125oC 1 25 C -55 C 0.1 o o 40 30 20 10 0 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) o TA = 125oC 25oC -55 C 0.01 0.1 0.3 0.5 0.7 0.9 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS7064SN3 Rev C1 (W) FDS7064SN3 Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 16A 8 VDS = 10V 6 15V 4 20V CAPACITANCE (pF) 3000 Ciss 2000 4000 f = 1MHz VGS = 0 V 1000 Crss 0 Coss 2 0 0 10 20 30 Qg, GATE CHARGE (nC) 40 50 0 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 100s 1ms ID, DRAIN CURRENT (A) 10 1s 1 VGS = 10V SINGLE PULSE RJA = 85oC/W TA = 25oC 0.01 0.01 0.1 1 10 100 DC 10ms 100ms P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT 50 Figure 8. Capacitance Characteristics. 40 SINGLE PULSE RJA = 85C/W TA = 25C 30 20 0.1 10 0 0.01 0.1 1 t1, TIME (sec) 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJA(t) = r(t) + RJA RJA = 85 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 o 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDS7064SN3 Rev C1 (W) FDS7064SN3 Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Fairchild's SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDS7064SN3. Figure 12. FDS7064SN3 SyncFET body diode reverse recovery characteristic. 0.04A/div 12.5 nS/div Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. 0.1 TA = 125oC IDSS, REVERSE LEAKAGE CURRENT (A) 0.01 0.001 TA = 100oC 0.0001 TA = 25oC 0.00001 0 5 10 15 20 25 30 VDS, REVERSE VOLTAGE (V) Figure 13. SyncFET body diode reverse leakage versus drain-source voltage and temperature FDS7064SN3 Rev C1 (W) FDS7064SN3 Dimensional Outline and Pad Layout 2004 Fairchild Semiconductor Corporation FDS7064SN3 Rev C1 (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACT Quiet SeriesTM ActiveArrayTM FAST BottomlessTM FASTrTM CoolFETTM FPSTM CROSSVOLTTM FRFETTM DOMETM GlobalOptoisolatorTM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM FACTTM ImpliedDisconnectTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC OPTOPLANARTM PACMANTM POPTM Power247TM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I8 |
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